Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
نویسندگان
چکیده
Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well ~QW! lasers have been realized, at an emission wavelength of 1.295 mm, with threshold and transparency current densities as low as 211 A/cm ~for L52000 mm! and 75 A/cm, respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-strained In0.4Ga0.6As0.995N0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (h inj;97%!. © 2002 American Institute of Physics. @DOI: 10.1063/1.1511290#
منابع مشابه
Current injection efficiency of InGaAsN quantum-well lasers
The concept of below-threshold and above-threshold current injection efficiency of quantum well sQWd lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity....
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